In a flash memory chip, which consequence results from electrons exceeding insulation's limit?

A)Data corruption via quantum tunneling✓

B)Reduced transistor switching speed

C)Increased power consumption marginally

D)Unpredictable gate oxide breakdown randomly

💡 Explanation

Data corruption occurs due to quantum tunneling of electrons through the insulation because the electric field exceeds material's bandgap; therefore, electrons enter unintended cells, rather than creating transistor malfunction under nominal conditions or elevated heat.

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In a flash memory chip, which consequence results from electrons exceeding insulation's limit?

💡 Explanation

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