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What mechanism explains current flow even when gate dielectric breakdown occurs in nanoscale transistors?

A)Quantum tunneling through the defects
B)Increased drift velocity of carriers
C)Thermionic emission across reduced barriers
D)Impact ionization near the drain

💡 Explanation

Quantum tunneling explains conduction because even with a damaged gate oxide, electrons can tunnel through the defects. This conduction happens through a quantum mechanical barrier, therefore transistor operates rather than stopping because of alternative failure mechanisms, such as thermionic emission needing high temperatures.

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