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What outcome arises when a metal-oxide-semiconductor field-effect transistor (MOSFET) gate voltage surpasses the threshold voltage?

A)Formation of a conducting channel
B)Increased gate oxide breakdown risk
C)Substrate electron-hole recombination
D)Reduced source-drain leakage current

💡 Explanation

When gate voltage exceeds the threshold voltage (Vth), channel inversion occurs because the electric field attracts charge carriers and leads to formation of a conducting channel. Therefore, a channel forms not oxide breakdown, recombination nor reduced leakage which depend on different operating regime boundaries.

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