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When a pulsed laser etches silicon exposed to chlorine gas, which mechanism limits etch depth?

A)Surface diffusion of chlorine radicals
B)Excimer ablation of the silicon oxide
C)Beer-Lambert law absorption by silicon
D)Plasma-induced chlorine dissociation kinetics

💡 Explanation

Laser absorption follows the Beer-Lambert law; therefore, intensity decreases exponentially with depth, limiting the etching because at a certain depth the intensity is too low to drive further reaction, rather than chlorine diffusion or excimer ablation.

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