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Which condition triggers electron tunneling in a tunnel diode affecting its electrical behavior?

A)Reverse bias exceeding breakdown voltage
B)Forward bias exceeding band gap energy
C)A high carrier concentration in depletion zone
D)Elevated junction temperature decreasing barrier height

💡 Explanation

When dopingcreates a high carrier concentration, a narrow depletion region is formed. This allows quantum tunneling, where electrons pass through the barrier because their wave functions overlap. Therefore tunneling occurs, rather than breakdown, forward conduction, or thermal reduction of barriers, which involves different mechanisms.

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