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Which conduction outcome occurs when a semiconductor's crystal lattice contains interstitial impurity atoms?

A)Increased free carrier concentration
B)Reduced electron-hole recombination
C)Increased energy bandgap width
D)Localized surface plasmon resonance

💡 Explanation

Increased free carrier concentration of either electrons or holes will develop, because dopant atoms introduce extra energy levels close to the conduction or valence bands; therefore conductivity rises, rather than reducing bandgap width.

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