Which consequence arises when a doped semiconductor's Fermi level aligns with a surface state within the band gap at a sensor?

💡 Explanation

Surface band bending increases greatly because the Fermi level pinning via Shockley states modifies the surface charge through changes of the occupancy of electrons within atomic orbitals, therefore the electrostatic potential strongly changes locally, rather than having other effects related to bulk effects.

• Which mechanism causes diminished photoconductivity when doped semiconductors reach high impurity concentrations?
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