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Which consequence often overcomes transistor scaling limitations via strain?

A)Increased electron mobility due to strain
B)Reduced ion implantation channel spacing
C)Enhanced thermal dissipation through silicon
D)Decreased gate oxide tunnelling probability

💡 Explanation

Increased electron mobility in strained silicon can overcome limitations because applying strain alters the crystal lattice, modifying the electronic band structure; therefore boosting electron flow, rather than alternative changes to the geometry or thermal dissipation.

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