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← ScienceWhich consequence results from electron availability limit during flash-memory write?
A)Increased charge leakage over time
B)Reduced transistor thermal runaway margins
C)Elevated bit error correction necessity✓
D)Decreased read disturb vulnerability
💡 Explanation
Increased bit errors derive from limited boosting voltage on some NAND flash memory cells. Electron quantum tunneling must charge the floating gate; because insufficient electrons cause partial charge, therefore more bit errors will occur, rather than improved data integrity.
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