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Which consequence results when a gate oxide breaks down beyond tolerance in a MOSFET?

A)Increased subthreshold leakage current
B)Reduced on-state resistance slightly
C)Improved switching speed marginally
D)Decreased threshold voltage transiently

💡 Explanation

Increased subthreshold leakage current emerges because gate oxide breakdown allows uncontrolled current flow; this is **tunneling**, therefore, leakage increases, rather than decreased resistance due to shorting alone because the current can't be shut off fully now.

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