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Which consequence results when a MOSFET experiences prolonged operation above its specified drain-source voltage?

A)Avalanche breakdown causes device failure
B)Gate oxide stress induces threshold shift
C)Reduced on-resistance enables higher gain
D)Increased carrier mobility optimizes switching

💡 Explanation

Avalanche breakdown occurs due to the high electric field accelerating carriers, leading to impact ionization and exponential current increase, because the excessive voltage overwhelms the reverse bias. Therefore, the MOSFET fails due to thermal runaway, rather than threshold shift or performance improvements.

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