Which consequence results when a MOSFET's gate oxide layer dopants contaminate single crystal silicon source lattice?

💡 Explanation

Increased subthreshold leakage occurs because dopant migration causes localized disruptions to the crystal lattice. This lowers transistor threshold voltage because of increased surface states; therefore more devices conduct at incorrect levels, rather than thermal runaway.

• Which risk increases when a voltage induces electron transition to higher orbitals in a transistor?
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• Which consequence results when excess vibrational excitation cleaves bonds?
• Which consequence results when differential attenuation occurs in birefringent materials?
• Which effect on aircraft control surfaces occurs when approaching the *critical Mach number*?
• Which outcome occurs when quenched steel undergoes temper embrittlement during a tempering process?