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Which consequence results when a p-n junction's depletion region narrows?

A)Increased reverse bias current
B)Decreased forward bias resistance
C)Enhanced electron-hole recombination
D)Reduced charge carrier bandwidth

💡 Explanation

Decreased forward bias resistance comes about because narrowing the depletion region via an applied forward bias lowers the potential barrier, therefore facilitating current flow as band bending decreases resistance, rather than hindering current via reverse bias.

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