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← ScienceWhich consequence results when an annealing imperfection alters silicon lattice spacing near transistor gate oxide?
A)Increased quantum mechanical tunneling current✓
B)Reduced channel carrier scattering rate
C)Enhanced silicon dopant segregation ratio
D)Decreased hot carrier injection probability
💡 Explanation
Increased quantum mechanical tunneling results, because altered atomic spacing affects the electron orbitals which form the potential barrier, therefore increasing the probability of transmission through gate oxide, rather than reduced tunneling due to a consistently formed barrier.
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