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← ScienceWhich consequence results when an NMOS transistor’s gate dielectric strength exceeds the theoretical limit?
A)Increased reverse saturation current
B)Gate oxide quantum tunneling occurs✓
C)Channel length modulation increases
D)Subthreshold leakage reduces sharply
💡 Explanation
Gate dielectric breakdown causes quantum tunneling because the electron can tunnel through the thin oxide layer given a sufficient electric field. Therefore, it leads to current leakage rather than other classical effects under normal operation.
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