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Which consequence results when electron collisions exceed gate oxide limits?

A)Latch-up becomes more likely
B)Increased dielectric breakdown results
C)Channel length modulation increases
D)Subthreshold leakage becomes significant

💡 Explanation

Increased electron collisions lead to higher energy levels; therefore, impact ionization occurs, initiating accelerated dielectric breakdown, because high energy electrons cause defects in the oxide layers, rather than only latch-up from parasitic bipolar transistors.

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