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Which consequence results when electrons undergo quantum tunneling in semiconductor memory?

A)Data corruption via charge leakage
B)Increased transistor switching speed
C)Improved energy band alignment
D)Enhanced electron-hole recombination rates

💡 Explanation

Data corruption can result from quantum tunneling in semiconductor memory, because electrons leak through insulating layers via quantum tunneling, therefore leading to unintended charge loss rather than the intended switching because the insulation is not absolute.

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