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Which consequence results when electrons undergo quantum tunneling through a CMOS transistor gate dielectric?

A)Increased gate leakage current
B)Improved transistor switching speed
C)Stable transistor threshold voltage
D)Reduced power dissipation

💡 Explanation

Increased gate leakage current occurs because quantum tunneling allows electrons to pass through the gate dielectric, even when they lack sufficient energy; therefore, current leakage increases rather than decreasing power dissipation or affecting speed since tunneling reduces device isolation.

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