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Which consequence results when electrons violate the potential barrier in MOSFET transistors?

A)Increased gate oxide leakage
B)Channel length modulation decrease
C)Reduced subthreshold swing range
D)Enhanced carrier mobility occurs

💡 Explanation

Increased gate oxide leakage results from electrons tunneling through the insulating oxide layer because quantum tunneling permits propagation through classically forbidden regions; therefore, leakage increases rather than mobility enhancing or performance improving.

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