Which consequence results when gate oxide breakdown in MOSFETs?

💡 Explanation

Gate oxide breakdown causes electron tunneling across the thin insulating layer, thus increasing unwanted leakage current, because of Fowler-Nordheim tunneling rather than ideal MOSFET operation. Therefore static power consumption increases rather than signal amplification occurring.

• Which consequence results when electron correlation increases in helium atom orbitals?
• Which mechanism hinders electron emission from a fullerene?
• Which risk increases when correcting satellite orbital decay?
• Which consequence results when a resonant cavity magnetron experiences mode competition?
• Which outcome occurs when molecular orbitals in butadiene destabilize?
• Which outcome occurs when hydrogen atoms migrate within the microstructure of high-strength steel bolts under tensile stress?