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Which consequence results when hot-carrier injection degrades a MOSFET’s threshold voltage?

A)Increased subthreshold leakage current
B)Permanent dielectric breakdown occurs
C)Improved switching speed of device
D)Reduced gate capacitance appears

💡 Explanation

Increased subthreshold leakage current occurs because hot-carrier injection introduces interface traps which alters the channel conductivity. Therefore, the MOSFET requires less gate voltage to conduct, rather than maintaining intended switching behaviour under thermal stress.

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