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Which consequence results when increased temperature broadens electron orbitals' energy levels within a semiconductor's conduction band?

A)Decreased electron-hole recombination lifetime
B)Enhanced interband tunneling probability
C)Increased intrinsic carrier concentration
D)Reduced effectiveness of impact ionization

💡 Explanation

Increased thermal broadening causes the Fermi level to shift closer to the band edges because thermal energy promotes more electrons to the conduction band; therefore carrier concentration grows, rather than recombination dominating at lower temperatures.

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