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Which consequence results when the dielectric constant of gate oxide in a MOSFET continuously degrades?

A)Increased channel hot carrier injection
B)Reduced subthreshold swing voltage
C)Elevated gate tunneling current leakage
D)Decreased drain saturation voltage

💡 Explanation

Elevated gate current leakage appears because electron tunneling increases through increasingly thin gate dielectric, driven by the reduced resistance; this Quantum Tunneling causes current flow rather than normal operation because the gate insulation breaks down.

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