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Which consequence results when the p-n junction in silicon avalanche diodes experiences high reverse voltage and temperature?

A)Increased carrier recombination velocity
B)Dielectric breakdown causing permanent damage
C)Reduced reverse saturation current
D)Enhanced forward bias conduction

💡 Explanation

Dielectric breakdown leads to permanent damage because when the electric field across the depletion region exceeds the breakdown voltage, impact ionization creates excessive carriers. This positive feedback in the avalanche multiplication process triggers heat generation and therefore melts the device, rather than merely increasing conductivity.

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