Which defect increases when a doped semiconductor cools rapidly?

A)Increased charge carrier recombination rate✓

B)Enhanced grain boundary electron tunneling

C)Decreased phonon mean free path

D)Amplified intrinsic free carrier generation

💡 Explanation

Fast cooling introduces lattice strain; because the dopants don't reach equilibrium positions quickly, they induce lattice defects. These defects act as recombination centers, therefore reducing charge carrier lifetime rather than causing electron tunneling because of doping gradients.

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Which defect increases when a doped semiconductor cools rapidly?

💡 Explanation

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