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Which degradation risk increases when silicon crystal ingot solidification decelerates?

A)Increased impurity segregation and defects
B)Reduced thermal stress fracture potential
C)Augmented dopant homogeneity distribution
D)Enhanced single crystal domain expansion

💡 Explanation

Slower solidification allows greater time for constitutional supercooling at the solid-liquid interface, therefore promoting impurity segregation and defect formation within the crystal, rather than resulting in more uniform doping profiles or reduced fracture.

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