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Which effect occurs when increasing dopant concentration in extrinsic semiconductors?

A)Band gap energy narrowing occurs
B)Electron mobility always increases linearly
C)Thermal runaway always is prevented
D)Intrinsic carrier concentration always decreases

💡 Explanation

Band gap narrowing occurs because increased dopant concentration introduces statistically significant interactions between the dopant's quantum orbitals, causing distortions; therefore, the gap shrinks, rather than intrinsic carrier concentration decreasing, which would dominate at very low temperatures.

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