Which effect results when oxides create extremely thin transistors?

A)Increased current leakage increases significantly✓

B)Gain increases exponentially after synthesis

C)Capacitance is minimized significantly system-wide

D)Resistance reduces, approaching zero ohms

💡 Explanation

Increased electron tunneling causes current leakage because the insulating oxide layer becomes so thin that electrons pass through the barrier by quantum tunneling rather than by conventional conductance; therefore, increased current leakage results, rather than resistance reducing.

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Which effect results when oxides create extremely thin transistors?

💡 Explanation

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