Which electron behavior causes current flow through gate oxide in a MOSFET below threshold voltage?

💡 Explanation

When bias is applied below threshold, electrons can tunnel through the gate oxide's potential barrier described by their wave functions because wave-particle duality allows penetration of classically forbidden regions leading to gate current. Wave function properties cause this tunneling effect. Therefore gate oxide current results, rather than emission, ionization, or scattering, which are due to different underlying physical processes.

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