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Which failure arises when an IGBT junction temperature exceeds limits?

A)Thermal runaway rapidly destroys device
B)Increased gate oxide layer breakdown
C)Collector current flow limit decreases
D)Reduced reverse recovery charge occurs

💡 Explanation

Thermal runaway arises because increased temperature raises the leakage current across the p-n junction, which further increases heat, therefore creating a positive feedback loop leading to device destruction, rather than stabilizing effects from decreased current flow.

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