Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich failure arises when an IGBT junction temperature exceeds limits?
A)Thermal runaway rapidly destroys device✓
B)Increased gate oxide layer breakdown
C)Collector current flow limit decreases
D)Reduced reverse recovery charge occurs
💡 Explanation
Thermal runaway arises because increased temperature raises the leakage current across the p-n junction, which further increases heat, therefore creating a positive feedback loop leading to device destruction, rather than stabilizing effects from decreased current flow.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which risk dramatically increases during DWDM system reconfiguration?
- Which outcome occurs when a solid-state relay driving an inductive load experiences voltage overshoot?
- Which outcome occurs when a hermetic refrigeration compressor experiences 'oil logging'?
- Which risk increases when robotic arm joint encoders, using incremental quadrature encoding, experience high-frequency vibration while positioning?
- Which outcome occurs when robot arm joint velocity sensor readings are significantly biased?
- Which outcome occurs when rapid thermal cycling causes piston erosion in a direct injection engine?
