Which failure becomes likely when high-frequency voltage spikes exceed a MOSFET's gate-oxide limit?

💡 Explanation

Gate-oxide dielectric breakdown occurs because exceeding the voltage limit causes an electric field strong enough for tunneling resulting in permanent insulating layer damage. Therefore, gate-oxide rupture is the primary risk, rather than parametric degradation scenarios under normal operating conditions.

• Which outcome occurs when asymmetric heating of piston rings?
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• Which risk sharply increases when a circuit breaker's interrupting rating is below the prospective fault current at installation?
• Which outcome occurs when hydrochlorofluorocarbon (HCFC) refrigerant leaks into the open atmosphere?
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• Which outcome occurs when harmonics distort voltage within sensitive electronic circuits?