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Which failure develops when MOSFET hotspots exceed limits?

A)Thermal runaway and gate rupture
B)Increased capacitance and drain leakage
C)Decreased switching speed, SOA failure
D)Electromigration induced contact degradation

💡 Explanation

Thermal runaway induces gate rupture; the temperature increases channel conductivity and power dissipation, triggering further rise because positive feedback surpasses system cooling. Therefore, gate rupture follows, rather than merely slower switching or contact degradation. Electromigration causes slow degradation not sudden failure.

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