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Which failure mode arises in flash memory when scaling down cells?

A)Increased leakage current
B)Reduced cell capacitance
C)Elevated thermal runaway
D)Decreased data retention

💡 Explanation

Increased leakage current occurs via quantum tunneling across the oxide layer thinning as transistor sizes reduce, because electrons pass through rather than being blocked. This results in elevated off-state current, whereas other effects occur at coarser scales or involve different transport mechanisms.

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