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Which failure mode occurs due to increasing gate capacitance in nanoscale MOSFETs?

A)Reduced channel electron mobility
B)Increased subthreshold leakage current
C)Suppressed Drain-Induced Barrier Lowering
D)Enhanced gate oxide reliability

💡 Explanation

Increased gate capacitance in nanoscale MOSFETs raises gate control, enabling OFF-state channel formation, leading to increased subthreshold leakage current because more charge affects the channel potential. Therefore option B, rather than improved performance, occurs at these scales due to capacitance.

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