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Which failure mode results when current flows across an oxide dielectric layer in a CMOS transistor gate?

A)Gate oxide breakdown occurs immediately
B)Hot carrier injection decreases threshold voltage
C)Quantum tunneling causes leakage current
D)Latch-up results from parasitic bipolar transistors

💡 Explanation

Quantum tunneling allows electrons transit through the ultrathin gate oxide because its thickness is comparable to the electron's de Broglie wavelength. Therefore, gate leakage significantly increases rather than causing immediate dielectric breakdown or other parasitic effects under normal operating conditions.

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