Which failure occurs when electron transport depends on tunneling through gate oxides?

💡 Explanation

Increased gate leakage happens because Field-assisted tunneling allows electrons to penetrate the thin oxide layer. Therefore, current increases, rather than mobility reducing or barrier lowering occuring which require different conditions in the semiconductor.

• Which risk increases when strain exceeds a crystal's elastic limit?
• Which outcome results when intense, focused, laser light ablates corneal tissue?
• Which mechanism causes rapid transistor failure during electrostatic discharge?
• Which mechanism causes increased orbital radius in spacecraft?
• Which consequence results when sustained high-energy particle bombardment dislodges atoms within a crystal lattice?
• Which consequence results when excessively strong electromagnetic pulses propagate?