Which failure results when a MOSFET's gate oxide layer is stressed beyond design limits?

💡 Explanation

Threshold voltage shifts because trapped charges appear via Fowler-Nordheim tunneling through the oxide layer when subjected to fields beyond breakdown strength; therefore threshold voltage decreases, rather than other parameters altering because trapping dominates.

• Which outcome results when anisotropic crystal growth occurs during directional solidification?
• Which risk increases when the moderator is lost in fission?
• Which mechanism accelerates reaction rate when using a solid heterogeneous catalyst in a continuous reactor?
• Which risk increases when a photovoltaic cell's depletion region narrows?
• Which risk increases when manipulating wave functions modelling small semiconductors?
• Which consequence occurs when the He atom 1s orbital overlaps?