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Which instability can arise within reverse-biased semiconductor diodes under high-frequency operation?

A)Excess carrier injection reverses polarity
B)Dielectric breakdown creates electron avalanche
C)Thermal runaway decreases resistance
D)Depletion region generates hole accumulation

💡 Explanation

Dielectric breakdown causes electron avalanche because the intense electric field accelerates electrons which liberate more electrons upon impact. This positive feedback causes a destructive surge of current, therefore it's electron avalanche breakdown, rather than other thermal or carrier-based effects.

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