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Which instability increases when the gate oxide thickness in a MOSFET scaling towards 3nm decreases significantly?

A)Increased quantum tunneling current
B)Reduced channel length modulation
C)Enhanced subthreshold swing effect
D)Mitigated hot carrier injection

💡 Explanation

Increased quantum tunneling current will destabilize the MOSFET, because the oxide layer becomes so thin that the quantum tunneling mechanism allows electrons to pass through, therefore leakage increases, rather than being effectively shut off, leading to higher power consumption.

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