Which limitation arises during read/write cycling in magnetoresistive RAM (MRAM)?

💡 Explanation

Tunnel barrier breakdown limits MRAM endurance because repeated reversals create dielectric stress. Voltage stress causes defect formation weakening the insulation, therefore electrical breakdown occurs, rather than slower domain switching processes.

• Which risk increases when neutron moderation fails during fission?
• Which consequence results when fuel isotopes accumulate unevenly inside a CANDU reactor?
• Which mechanism causes quantized magnetic flux through a Josephson junction?
• Which observable effect is caused by thin-film interference?
• Which bending results from spacetime curvature near a black hole?
• Which outcome occurs when Arrhenius equation's frequency factor is significantly underestimated during reaction modeling?