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Which limitation arises in a silicon p-n junction diode when reverse bias reaches a specific threshold?

A)Increased forward current flow
B)Zener breakdown occurs suddenly
C)Minority carrier diffusion ceases
D)Thermal runaway is guaranteed

💡 Explanation

A large reverse bias causes a large electric field in depletion region; Zener breakdown occurs because quantum tunneling dominates, collapsing the depletion, therefore a large reverse current flows, rather than gradual increase or thermal runaway.

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