Which limitation arises when increasing doping concentration excessively in a tunnel diode?

💡 Explanation

When doping concentration becomes excessive, the depletion region narrows excessively due to the formation of a highly abrupt p-n junction profile; this reduces the tunneling probability because the barrier width becomes too small, suppressing quantum tunneling. Therefore, reduced tunneling probability limits current, rather than increased resistance, thermal runaway, or leakage which require different physical phenomena.

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