Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich mechanism causes anisotropic etching rates in silicon crystal?
A)Surface energy minimization due to passivation✓
B)Ion implantation introducing new crystalline formations
C)Quantum tunneling creating electron pathways
D)Thermal expansion weakening grain boundaries
💡 Explanation
Surface energy minimization governs the etching rates because different crystal planes exhibit different surface energies; therefore, some planes etch faster than others due to varying reactivity, rather than defects or quantum effects which influence the bulk properties.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which risk significantly increases above Curie temperature in ferromagnetic alloys used within an inductor core?
- Which risk elevates when ice blockage prevents phase switching fluid flow?
- Which rate-altering condition results from reduced reactant collisions?
- In a Carnot engine at cryogenic temperatures, which consequence develops when the cold reservoir's temperature approaches absolute zero?
- Which effect occurs when endothermic reaction temperature decreases within a closed system?
- Which consequence results when the viscosity term is omitted from the Navier-Stokes equations during simulation of a mixed fluid?
