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Which mechanism causes anisotropic etching rates in silicon crystal?

A)Surface energy minimization due to passivation
B)Ion implantation introducing new crystalline formations
C)Quantum tunneling creating electron pathways
D)Thermal expansion weakening grain boundaries

💡 Explanation

Surface energy minimization governs the etching rates because different crystal planes exhibit different surface energies; therefore, some planes etch faster than others due to varying reactivity, rather than defects or quantum effects which influence the bulk properties.

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