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Which mechanism causes increased electrical resistance in polycrystalline silicon microbeams under significant tensile stress?

A)Peierls stress overcoming lattice resistance
B)Piezoresistivity altering band structure
C)Zener breakdown forming conductive paths
D)Hall effect generating opposing voltage

💡 Explanation

Piezoresistivity, where mechanical stress alters the material’s band structure and carrier mobility, causes increased resistance because the tensile stress modifies the band gap and scattering rates; therefore resistance rises, rather than a conductive path forming.

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