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← ScienceWhich mechanism causes localized *p*-type doping in germanium crystals grown by Czochralski method with gallium contamination?
A)Impurity segregation at solid-liquid interface✓
B)Thermal gradient induced defect diffusion
C)Dislocation pinning by impurity atoms
D)Ga atoms occupying interstitial sites
💡 Explanation
Impurity segregation causes *p*-type doping because highly soluble gallium preferentially incorporates into the solidifying lattice at specific locations close to solid-liquid interface, therefore gallium increases there, rather than distributing evenly like in gas doping.
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