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Which mechanism causes reduced electron mobility in polysilicon thin films?

A)Grain boundary scattering
B)Increased phonon dispersion
C)Interfacial charge accumulation
D)Resonant tunneling enhancement

💡 Explanation

Grain boundary scattering reduces mobility because charge carriers are deflected at the interfaces between the small crystal grains. This mechanism causes disordered potential variations; therefore, mobility decreases, rather than increasing due to enhanced tunneling.

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