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Which mechanism causes the temperature dependence of conductivity in extrinsic semiconductors?

A)Fermi level temperature broadening
B)Phonon scattering diminishing band
C)Increased minority carrier injection
D)Reduced defect state ionization

💡 Explanation

The changing temperature of extrinsic semiconductors shifts the Fermi level relative to the dopant energy levels. This causes Fermi level temperature broadening near the band edges, because increased thermal excitation influences carrier distribution, therefore mobility changes rather than phonon scattering or injection effects.

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