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← ScienceWhich mechanism changes resistivity in piezoresistive single crystal silicon?
A)Stress inducing band structure changes✓
B)Phonon scattering reducing carrier mobility
C)Dopant atoms becoming self-compensated
D)Thermal expansion increasing grain boundary defects
💡 Explanation
Stress changes the band structure and effective mass because this influences the availability of energy states for charge carriers, resulting in a change in resistivity as demonstrated by the piezoresistive effect, therefore option A rather than changes due to phonon scattering, dopant compensation or grain distortions.
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