VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which mechanism contributes to increased gate leakage when MOSFET channel length scales down?

A)Quantum tunneling of electrons
B)Increased electron-phonon scattering
C)Enhanced thermal carrier injection
D)Surface recombination rate increase

💡 Explanation

Quantum tunneling occurs across the gate dielectric as the gate oxide thickness decreases because the required potential barrier decreases, rather than processes like scattering, thermal injection or surface recombination arising from defects on the silicon itself.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science