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← ScienceWhich mechanism contributes to increased gate leakage when MOSFET channel length scales down?
A)Quantum tunneling of electrons✓
B)Increased electron-phonon scattering
C)Enhanced thermal carrier injection
D)Surface recombination rate increase
💡 Explanation
Quantum tunneling occurs across the gate dielectric as the gate oxide thickness decreases because the required potential barrier decreases, rather than processes like scattering, thermal injection or surface recombination arising from defects on the silicon itself.
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