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Which mechanism dictates the Hall voltage's sensitivity as crystal asymmetry increases?

A)Anisotropic carrier mobility variation
B)Phonon scattering mean free path
C)Impurity band energy localization
D)Magnon-drag thermoelectric coefficient

💡 Explanation

Increased crystal asymmetry will alter carrier mobility because variations differ based on crystal orientation; therefore, the observed Hall coefficient shifts. Rather than other factors affecting the Hall voltage directly, anisotropic carrier mobility is the cause.

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